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| LC 3 mm (T1) LED, Diffused Low Current LED LS 3369, LY 3369, LG 3369 Besondere Merkmale q q q q q q eingefarbtes, diffuses Gehause als optischer Indikator einsetzbar hohe Lichtstarke bei kleinen Stromen (typ. 2 mA) Lotspiee mit Aufsetzebene gegurtet lieferbar Storimpulsfest nach DIN 40839 VEX06710 Features q q q q q q colored, diffused package for use as optical indicator high luminous intensity at low currents (typ. 2 mA) solder leads with stand-off available taped on reel load dump resistant acc. to DIN 40839 Typ Type Emissionsfarbe Color of Emission Gehausefarbe Color of Package Lichtstarke Luminous Intensity IF = 2 mA IV (mcd) 0.63 ... 5.0 1.60 ... 3.2 2.50 ... 5.0 1.60 ... 12.5 0.63 ... 1.00 ... 1.60 ... 2.50 ... 1.00 ... 0.63 ... 1.00 ... 1.60 ... 1.00 ... 5.0 2.0 3.2 5.0 8.0 5.0 2.0 3.2 8.0 Bestellnummer Ordering Code LS 3369-EH LS 3369-G LS 3369-H LS 3369-GK LY 3369-EH LY 3369-F LY 3369-G LY 3369-H LY 3369-FJ LG 3369-EH LG 3369-F LG 3369-G LG 3369-FJ super-red red diffused Q62703-Q1748 Q62703-Q2068 Q62703-Q3820 Q62703-Q3821 Q62703-Q1749 Q62703-Q2030 Q62703-Q2029 Q62703-Q1906 Q62703-Q3822 Q62703-Q1750 Q62703-Q2069 Q62703-Q2070 Q62703-Q3823 yellow yellow diffused green green diffused Streuung der Lichterstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0. Semiconductor Group 1 1998-07-13 LS 3369, LY 3369, LG 3369 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Symbol Symbol Werte Values - 55 ... + 100 - 55 ... + 100 + 100 7.5 0.15 Einheit Unit C C C mA A Top Tstg Tj IF IFM VR Ptot 5 20 V mW Rth JA 500 K/W Semiconductor Group 2 1998-07-13 LS 3369, LY 3369, LG 3369 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange des emittierten Lichtes(typ.) Wavelength at peak emission(typ.) IF = 7.5 mA Dominantwellenlange(typ.) Dominant wavelength(typ.) IF = 7.5 mA Symbol Symbol LS peak 635 Werte Values LY 586 LG 565 nm Einheit Unit dom 628 590 570 nm Spektrale Bandbreite bei 50 % Irel max(typ.) Spectral bandwidth at 50 % Irel max(typ.) IF = 7.5 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung(typ.) Forward voltage(max.) IF = 2 mA Sperrstrom(typ.) Reverse current(max.) VR = 5 V Kapazitat(typ.) Capacitance VR = 0 V, = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 %(typ.) IV from 90 % to 10 %(typ.) IF = 100 mA, tP = 10 s, RL = 50 2 45 45 25 nm 60 1.8 2.6 0.01 10 3 60 2.0 2.7 0.01 10 3 60 1.9 2.6 0.01 10 15 Grad deg. V V A A pF VF VF IR IR C0 tr tf 200 150 200 150 450 200 ns ns Semiconductor Group 3 1998-07-13 LS 3369, LY 3369, LG 3369 Relative spektrale Emission Irel = f (), TA = 25 C, IF = 7.5 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve Abstrahlcharakteristik Irel = f () Radiation characteristic Semiconductor Group 4 1998-07-13 LS 3369, LY 3369, LG 3369 Durchlastrom IF = f (VF) Forward current TA = 25 C 10 2 OHL01208 Relative Lichtstarke IV/IV(2 mA) = f (IF) Relative luminous intensity TA = 25 C 10 1 V V(2mA) 10 0 OHL01207 F mA 10 1 5 super-red green yellow 5 10 -1 5 green yellow super-red 10 0 5 10 -2 5 10 -1 1.0 1.4 1.8 2.2 2.6 3.0 V 3.4 VF 10 -3 10 -1 5 10 0 5 10 1 mA 10 F 2 Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C 10 3 OHL01278 Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA) 8 OHL01193 F mA tP t D= P T D= 0.005 0.01 0.02 0.05 0.1 0.2 0.5 F T F mA 6 5 4 3 10 2 5 10 1 5 DC 2 1 10 0 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 1 tp 0 0 20 40 60 80 C 100 TA Semiconductor Group 5 1998-07-13 LS 3369, LY 3369, LG 3369 Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 7.5 mA 690 peak nm 650 super-red 630 610 590 570 550 yellow OHL01672 Dominantwellenlange dom = f (TA) Dominant wavelength IF = 7.5 mA 690 dom nm 650 630 610 590 570 550 yellow green super-red OHL01673 green 0 20 40 60 80 C 100 TA 0 20 40 60 80 C 100 TA Durchlaspannung VF = f (TA) Forward voltage IF = 2 mA 2.4 OHL01750 Relative Lichtstarke IV/IV(25 C) = f (TA) Relative luminous intensity IF = 2 mA 2.0 V V(25 C) 1.6 OHL01675 VF V 2.2 2.0 yellow green 1.8 super-red 1.2 yellow green 0.8 super-red 1.6 0.4 1.4 0 20 40 60 80 C 100 TA 0.0 0 20 40 60 80 C 100 TA Semiconductor Group 6 1998-07-13 LS 3369, LY 3369, LG 3369 Mazeichnung Package Outlines (Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) Area not flat 0.6 0.4 0.7 0.4 0.8 0.4 4.8 4.4 2.7 2.1 3.4 3.1 2.54 mm spacing 1.1 0.9 1.8 1.2 29.0 27.0 3.7 3.5 6.1 5.7 0.6 0.4 Collector/ Cathode Chip position GEX06710 Kathodenkennzeichnung: Cathode mark: Kurzerer Lotspie Short solder lead Semiconductor Group 7 o2.9 o2.7 1998-07-13 |
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